※ : Products list (parametric search)
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※ : Products list (parametric search)
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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Low voltage MOSFETs are commonly used for load switching, power conversion, battery systems, motor drives and DC-DC converter applications. Device selection requires engineers to balance conduction loss, switching loss, current capability, thermal limits and available board space.
The MOSFET voltage rating must exceed the maximum voltage that can occur across the device. This calculation should include input variation, switching spikes and transient conditions. Additional voltage margin may be required in circuits with high parasitic inductance or long PCB traces.
Drain-source on-resistance directly affects conduction loss. Lower RDS(on) can reduce heat generation at high current, but the value changes with gate voltage and junction temperature. Engineers should compare the RDS(on) specified under conditions that match the actual gate-drive circuit.
A device with very low RDS(on) may have higher gate charge or capacitance. This can increase switching loss and place greater demand on the gate driver. Higher-frequency circuits generally require careful balancing between conduction performance and switching characteristics.
The current rating alone does not determine whether a MOSFET is appropriate for the application. Package thermal resistance, PCB copper area, airflow and ambient temperature all affect the device’s allowable operating current. Junction temperature should be calculated under realistic operating conditions.
Toshiba offers 12V to 300V MOSFETs across a range of voltage ratings, package types and electrical characteristics. Review available products and compare selection parameters on the Toshiba 12V to 300V MOSFET product page.