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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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The following table compares SBDs with rectifier diodes, switching diodes, and FRDs.
Reverse recovery time can be a limiting factor for the turn-off of a diode. SBDs offer advantages of low forward voltage and short reverse recovery time whereas their disadvantages include low maximum rated reverse voltage (VR) and large leakage under VR.
* For the electrical characteristics of SiC SBDs, see SiC devices suitable for power supply circuits.
The following subsections explain the electrical characteristics shown above.