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SiC devices suitable for power supply circuits

SiC Schottky barrier diodes (SBDs) have achieved high breakdown voltages for SBDs, which are difficult to achieve with Si materials, and significantly reduced reverse-recovery times (charges) that could not be achieved with p-n junction diodes, such as Si-FRD(Fast Recovery Diode).
Our products have also improved the leakage current and surge current, which are drawbacks of SBD, by adopting an improved JBS structure.
As shown in the table below, SiC achieves various characteristics required for power supply circuits that have been difficult to realize with Si diodes.

Electrical characteristics and symbols
(Improvement direction)
Effect on circuits Si material SiC material
FRD* SBD SBD

SBD
(Improved JBS structure)

Reverse voltage, VR
(high)
Voltage surge during switching ★★★★ ★★★★★ ★★★★★
Leakage current, IR
(low)
Thermal runaway ★★ ★★★ ★★★★★
Forward Voltage, VF
(low)
Considerable effect on efficiency ★★★ ★★★★★ ★★★ ★★★
Reverse recovery time, trr
(low)
Considerable effect on efficiency ★★★★★ ★★★★★ ★★★★★
Surge current, IFSM
(large)
Inrush current when switching on

★★★★★

★★ ★★★

The greater the number of ★, the better.

* FRD: Fast recovery diode

SiC schottky barrier diodes

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