Products
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
Download "Chapter I : Basis of Semiconductors" (PDF:894KB)
Silicon (Si) and germanium (Ge) are well-known semiconductor materials. When they are pure crystals, these substances are close to insulators (intrinsic semiconductors), but doping a small amount of dopant causes the electrical resistance to drop greatly, turning them into conductors.
Depending on the kind of dopant, n-type or p-type semiconductor can be made.
Semiconductors made of several elements are called compound semiconductors, as opposed to those made of a single element such as silicon semiconductors. There are combinations such as Group III and Group V of the periodic table, Group II and Group VI, Group IV, etc.
*Doping phosphorus (P) of Group V into silicon (Si) of Group IV makes n-type semiconductor.
*Doping boron (B) of Group III into silicon (Si) of Group IV makes p-type semiconductor.