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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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Download "Chapter I : Basis of Semiconductors" (PDF:894KB)
Apart from silicon, there are compound semiconductors that combine Group III and V elements and Group II and VI elements. For example, GaAs, InP, InGaAlP, etc. have been conventionally used for high-frequency devices and optical devices.
In recent years, InGaN has been attracting attention as a material for blue LEDs and laser diodes, and SiC and GaN as materials for power semiconductors have been noted and commercialized.
Typical compound semiconductors
Group II-VI: ZnSe
Group III-V: GaAs, GaN, InP, InGaAlP, InGaN
Group IV-IV: SiC, SiGe