Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

Are the drain current ID and IDP (absolute maximum ratings) constant to temperature?

The allowable range of drain current is not constant to temperature.
It depends on the ambient temperature (package temperature) and heat dissipation conditions (thermal resistance).
For an allowable range of each of our product, the thermal resistance of the package and the maximum rated channel temperature shown in the data sheet are greatly related.

The drain current ID / IDP described in the data sheet is specified under ideal heat dissipation conditions with an ambient temperature of 25°C. ID is the maximum rating of the forward drain current when DC is applied, and IDP is the maximum rating of the forward drain current that can be applied with the specified pulse width.
ID and IDP are specified so that the channel temperature does not exceed Tch(max) when the MOSFET is operating in the on region (linear region) under specified conditions.
The main cause of the temperature rise of the MOSFET in the on-region is the power loss PRloss caused by the on-resistance RDS(ON) between drain and source.
As an example, find the forward drain current ID when DC current is applied.
The loss PRloss due to the on-resistance RDS(ON) is given by the following equation.

PRloss = RDS(ON) x ID2

Assuming that the thermal resistance of the product is Rth(ch-c), the temperature rise ΔT due to the heat generated by the loss is given by the following equation.

ΔT = PRloss x Rth(ch-c)

The channel temperature is obtained by adding ΔT to the case temperature TC during MOSFET operation, so the following equation must be satisfied.

Tc+ ΔT < Tch(max)

Solving the above formula for the ID gives: IDP can be considered in the same way.

Are the drain current ID and IDP (absolute maximum ratings) constant to temperature?

Tch(max) : Maximum channel temperature
T: Case temperature (25°C)
Rth(ch-c) : Steady-state thermal resistance
rth(ch-c)(t) : Transient thermal resistance
RDS(ON)(max) : Maximum drain-source on-state resistance at the maximum channel temperature

the transient thermal resistance characteristic diagram

The transient thermal resistance rth(ch-c)(t) is read from the transient thermal resistance characteristic diagram described in the data sheet.

The following documents also contain related information:

Maximum Ratings: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

In the actual design, please design with a margin for the calculated value.
Reliability will change significantly depending on the degree of derating. For information on derating, please refer to the following document.
Document title “Concepts of Derating”

Reliability Information “Handling Precautions and Requests”

A new window will open