-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
Applications
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
Infrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
IoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
-
Knowledge
- Where To Buy View
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
Low dynamic resistance
The TVS diode (ESD protection diode) is connected in parallel to the signal line, the power supply line, and the GND line in order to protect the circuits in subsequent stages. The applied ESD flows through the TVS diode to the GND line. However, since the TVS diode has its own resistive component (dynamic resistance), if this resistive component is large, the ESD will not flow easily. The lower the dynamic resistance, the easier it is to absorb ESD.
The DF2SxM4 series (EAP-IV) of low-capacitance TVS diodes has reduced dynamic resistances compared with the conventional EAP-II series (EAP-II) of TVS diodes. This increases the absorption performance of ESD and also reduces the clamping voltage, thereby improving the protection performance of electronic equipment.
Low dynamic resistance TVS diodes
Related information
Queries about purchasing, sampling and IC reliability
Stock Check & Purchase
require 3 characters or more.
| Part Number | Authorized Distributor | Stock Quantity | Date | Shopping Cart |
|---|