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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Low dynamic resistance
The TVS diode (ESD protection diode) is connected in parallel to the signal line, the power supply line, and the GND line in order to protect the circuits in subsequent stages. The applied ESD flows through the TVS diode to the GND line. However, since the TVS diode has its own resistive component (dynamic resistance), if this resistive component is large, the ESD will not flow easily. The lower the dynamic resistance, the easier it is to absorb ESD.
The DF2SxM4 series (EAP-IV) of low-capacitance TVS diodes has reduced dynamic resistances compared with the conventional EAP-II series (EAP-II) of TVS diodes. This increases the absorption performance of ESD and also reduces the clamping voltage, thereby improving the protection performance of electronic equipment.
Low dynamic resistance TVS diodes
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