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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Schottky Barrier Diodes
A Schottky barrier diode is a semiconductor diode formed by the junction of a semiconductor with a metal. They have a lower forward voltage and a faster switching action than a general PN junction diode.
Therefore, they are excellent for increasing efficiency and supporting the miniaturization of a power supply circuit.
Their reverse current is larger than a general PN junction diode, so may be more easily affected by heat.
The correlation between VF and IR depends on the metal used. Toshiba is developing a lineup using multiple metals.
A Schottky barrier diode is a semiconductor diode formed by the junction of a semiconductor with a metal.
They have a lower forward voltage and a faster switching action than a general PN junction diode.
Their reverse current is larger than a general PN junction diode, so may be more easily affected by heat.
Schottky barrier diodes
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