Schottky Barrier Diodes
A Schottky barrier diode is a semiconductor diode formed by the junction of a semiconductor with a metal. They have a lower forward voltage and a faster switching action than a general PN junction diode.
Therefore, they are excellent for increasing efficiency and supporting the miniaturization of a power supply circuit.
Their reverse current is larger than a general PN junction diode, so may be more easily affected by heat.
The correlation between VF and IR depends on the metal used. Toshiba is developing a lineup using multiple metals.
A Schottky barrier diode is a semiconductor diode formed by the junction of a semiconductor with a metal.
They have a lower forward voltage and a faster switching action than a general PN junction diode.
Their reverse current is larger than a general PN junction diode, so may be more easily affected by heat.
Schottky barrier diodes
Queries about purchasing, sampling and IC reliability
線上庫存查詢跟購買
型號需要超過三個文字以上
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.