A Schottky barrier diode is a semiconductor diode formed by the junction of a semiconductor with a metal. They have a lower forward voltage and a faster switching action than a general PN junction diode.
Therefore, they are excellent for increasing efficiency and supporting the miniaturization of a power supply circuit.
Their reverse current is larger than a general PN junction diode, so may be more easily affected by heat.
The correlation between VF and IR depends on the metal used. Toshiba is developing a lineup using multiple metals.
A Schottky barrier diode is a semiconductor diode formed by the junction of a semiconductor with a metal.
They have a lower forward voltage and a faster switching action than a general PN junction diode.
Their reverse current is larger than a general PN junction diode, so may be more easily affected by heat.
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