6500V Press Pack IEGT Contributing to Higher Voltage and Size Reduction for DC Power Transmission Systems and Industrial Motor Drives

6500V Press Pack IEGT Contributing to Higher Voltage and Size Reduction for DC Power Transmission Systems and Industrial Motor Drives

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the 6500V/2000A press pack IEGT[1] “ST2000JXH35A,” equipped with newly developed trench-type IEGT chips for high-voltage converters such as DC power transmission systems, industrial motor-drive equipment, and STATCOM[2].

In recent years, renewable energy sources such as wind, solar, and hydroelectric power have been increasingly adopted to address global warming. These power generation sites are often located far from consumption areas, leading to a growing need for long-distance power transmission. 
In addition to reducing transmission losses in long-distance power transmission, addressing output fluctuations in renewable energy has become increasingly important. Therefore, DC power transmission systems, which are more efficient and easier to control than AC systems, are gaining popularity.

The newly developed trench-type IEGT chips achieve high turn-off capability and high short-circuit withstand capability through optimized cell structure. The new product has successfully undergone both turn-off and short-circuit test with a test voltage of 4500V, making it suitable for applications that require high voltage.
By adopting the 6500 V-rated ST2000JXH35A, the number of series-connected units of devices in a DC power transmission system can be reduced by approximately 33%[3] compared to configurations using 4500V-rated devices, contributing to weight reduction and overall miniaturization of the equipment. Consequently, construction and transportation costs can be reduced, making this product particularly suitable for offshore converter stations[4] where these costs are significant. In addition to DC power transmission systems, the ST2000JXH35A also contributes to achieving higher voltage and more compact designs in high-voltage converters such as industrial motor-drive equipment and STATCOM.

Toshiba will continue developing press pack IEGTs for high-voltage converters and will expand its product lineup.

Notes:

[1] IEGT: Injection Enhanced Gate Transistor

[2] STATCOM: An abbreviation for Static Synchronous Compensator. It is a self-commutated reactive power compensation device designed to stabilize voltage and compensate reactive power in electric power systems.

[3] Based on Toshiba’s estimated value
Assuming use in a ±500 kV direct current transmission system:
Required number of series-connected units when using a 6500 V-rated device at 3000 V: 334 units
Required number of series-connected units when using a 4500 V-rated device at 2000 V: 500 units
Reducing the number of series units from 500 to 334 results in an estimated reduction of approximately 33%.

[4] Offshore converter station: A facility installed at sea to collect, convert, and transmit electricity generated by offshore wind power plants.

Features

  1. High-voltage device: Collector-emitter voltage rating VCES=6500V
  2. High turn-off capability: Turn-off test voltage VCC=4500V
  3. High short-circuit withstand capability: Short-circuit test voltage VCC=4500V

Applications

  • DC power transmission systems
  • Industrial motor drives
  • STATCOM

Main Specifications

(Unless otherwise specified, TC=25°C)

Part number ST2000JXH35A
Package 2-168B1S
Absolute
maximum
ratings
Collector-emitter voltage VCES (V) 6500
Gate-emitter voltage VGES (V) ±20
Collector current (DC) I(A) Tf=87°C 2000
Junction temperature T(°C) -40 to 125
Electrical
characteristics
Collector-emitter saturation
voltage VCE(sat) (V)
IC=2000A, VGE=15V,
Tj=125°C
Typ. 2.80
Turn-on switching loss Eon (J) VCC=3600V, IC=2000A,
RG(on)=2.0Ω, VGE=±15V,
Ls≃300nH, Tj=125°C,
Diode: 2000JXHH35
Typ. 12.30
Turn-off switching loss Eoff (J) VCC=3600V, IC=2000A,
RG(off)=30Ω, VGE=±15V,
Ls≃300nH, Tj=125°C
Typ. 15.60
Short-circuit pulse width tpsc (µs) VCC=4500V, RG(on)=2.0Ω,
RG(off)=30Ω, VGE=±15V,
Ls≃150nH, Tj=125°C
Max 10
Turn-off test VSUS VCC=4500V, IC=4000A, RG(off)=30Ω,
VGE=±15V, Ls≃250nH, Tj=125°C
-

Internal Circuit

Internal Circuit Configuration Diagram

Application Circuit Examples

Modular Multilevel Converter (MMC) circuit of DC power transmission

Modular Multilevel Converter (MMC) circuit of DC power transmission

Converter and inverter circuit of the motor drive

Converter and inverter circuit of the motor drive

Note:

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Application Note
High-power device Press Pack IEGT(PPI) Application note (PDF: 2.15MB)

Follow the links below for more on the new product.
ST2000JXH35A

Follow the link below for more on Toshiba’s press pack IEGTs (PPIs).
IEGT (PPI)

 

 

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