Low radiated emission noise

Optimized chip design achieves low radiated emission noise. Generally speaking, lower external gate resistance (RG) reduces turn-off switching loss and heightens radiated emission noise. Switching loss can be lowered by improving the trade-off between turn-off switching loss and radiated emission noise.

Radiated emission noise is low.


The radiated emission noise of the new product is improved by about 10dBμV/m at around 30MHz, where noise-field intensity is at its highest.


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