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40V N-channel Power MOSFET with Its Latest Generation Process to Improve Power Supply Efficiency
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched the 40V N-channel power MOSFET "TPHR6704RL," fabricated with U-MOS11-H, Toshiba's latest-generation process[1], for switched-mode power supplies in industrial equipment such as data centers.
The new product reduces the drain-source On-resistance by approximately 21%[2] compared to the 40V product TPHR8504PL, which uses the existing generation process, U-MOSIX-H. Additionally, it improves the trade-off characteristics by reducing drain-source On-resistance×total gate charge by approximately 37%[3] compared to TPHR8504PL, achieving industry-leading[1] low losses. Furthermore, it also reduces the spike voltage generated between the drain and source during switching, thereby contributing to lower EMI in switched-mode power supplies. The package used is SOP Advance(N), which offers high footprint compatibility with SOP Advance.
Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available. Online Circuit Simulator available on Toshiba’s website allows users to easily verify circuit operation without the hassle of building a simulation environment and downloading element models.
Toshiba will continue to expand its lineup of power MOSFETs that enable more efficient power supplies, contributing to lower power consumption in equipment.
Notes:
[1] According to Toshiba’s survey as of February 2026.
[2] Test condition: VGS=10V, ID=50A (TPHR8504PL) VGS=10V, ID=75A (TPHR6704RL)
[3] Test condition: VDD≈20V, VGS=10V, ID=50A (TPHR8504PL) VDD≈20V, VGS=10V, ID=75A (TPHR6704RL)
Features
- Reduced drain-source On-resistance by approximately 21% compared to Toshiba's existing product
- Reduced On-resistance×total gate charge by approximately 37% compared to Toshiba's existing product
Features Explanation
1. Reduced drain-source On-resistance by approximately 21% compared to Toshiba's existing product
The new product reduces the drain-source On-resistance by approximately 21% compared to Toshiba's existing product TPHR8504PL with the same voltage, contributing to the reduction of conduction losses in switched-mode power supplies.
2. Reduced On-resistance×total gate charge by approximately 37% compared to Toshiba's existing product
In addition to reducing the drain-source On-resistance, the total gate charge has also been lowered. TPHR6704RL reduces the drain-source On-resistance×total gate charge by approximately 37% compared to Toshiba's existing product TPHR8504PL with the same voltage, contributing to lower losses and higher efficiency in applications such as switched-mode power supplies.
Applications
Industrial Equipment
- Switched-mode power supplies for data centers
Main Specifications
(Unless otherwise specified, Ta=25°C)
| Part number | TPHR6704RL | |||
|---|---|---|---|---|
| Absolute maximum ratings |
Drain-source voltage VDSS (V) | 40 | ||
| Drain current (DC) ID (A) | Tc=25°C | 420 | ||
| Channel temperature Tch (°C) | 175 | |||
| Electrical characteristics |
Drain-source On-resistance RDS(ON) (mΩ) |
VGS=10V | Max | 0.67 |
| VGS=4.5V | Max | 0.97 | ||
| Total gate charge Qg (nC) | VGS=10V | Typ. | 88 | |
| Gate switch charge Qsw (nC) | Typ. | 24 | ||
| Output charge Qoss (nC) | Typ. | 100 | ||
| Reverse recovery time trr (ns) | Typ. | 73 | ||
| Reverse recovery charge Qrr (nC) | Typ. | 106 | ||
| Package | Name | SOP Advance(N) | ||
| Size (mm) | Typ. | 4.9×6.1 | ||
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