Description

Polarity P-ch
Generation U-MOSⅥ
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSM
Package Image Toshiba SSM3J326T Small-signal MOSFET product TSM package image
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.7
Package Dimensions View
Land pattern dimensions View

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Gate-Source voltage VGSS +/-12 V
Drain current ID -5.6 A

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -1.2 V
Gate threshold voltage (Min) Vth - -0.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 39.3
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 45.7
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 62.5
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 115
Input capacitance (Typ.) Ciss - 650 pF

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