SSM6L12TU

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅢ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name UF6
Package Image UF6
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions View
Land pattern dimensions View
CAD data
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-12 V
Drain current (Q1) ID 500 mA
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-12 V
Drain current (Q2) ID -500 mA
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.1 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 180
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 145
Input capacitance (Q1) (Typ.) Ciss - 245 pF
Gate threshold voltage (Q2) (Max) Vth - -1.1 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 260
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 430
Input capacitance (Q2) (Typ.) Ciss - 218 pF
Purchase and Sample
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Document

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Mar,2017

Dec,2023

Apr,2024

Apr,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
Note
SSM6L12TU,LF 3000 Yes - General Use
SSM6L12TU,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)

(Note):For more information, please contact our sales or use the inquiry form on our website.


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Frequently Asked Questions

FAQs

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