SSM6L12TU

不推薦用於新設計

Small Low ON resistance MOSFETs

產品概要

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅢ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

包裝資訊

Toshiba Package Name SOT-363F (UF6)
Package Image 東芝 SSM6L12TU Small Low ON resistance MOSFETs產品 UF6 封裝圖片
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *2

Download from UltraLibrarian® in your desired CAD format
*1 *2

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-12 V
Drain current (Q1) ID 500 mA
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-12 V
Drain current (Q2) ID -500 mA
Power Dissipation PD 0.5 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Q1) (Max) Vth - 1.1 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 180
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 145
Input capacitance (Q1) (Typ.) Ciss - 245 pF
Gate threshold voltage (Q2) (Max) Vth - -1.1 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 260
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 430
Input capacitance (Q2) (Typ.) Ciss - 218 pF

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Mar,2017

Apr,2025

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