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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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SiC devices suitable for power supply circuits

SiC Schottky barrier diodes (SBDs) have achieved high breakdown voltages for SBDs, which are difficult to achieve with Si materials, and significantly reduced reverse-recovery times (charges) that could not be achieved with p-n junction diodes, such as Si-FRD(Fast Recovery Diode).
Our products have also improved the leakage current and surge current, which are drawbacks of SBD, by adopting an improved JBS structure.
As shown in the table below, SiC achieves various characteristics required for power supply circuits that have been difficult to realize with Si diodes.

Electrical characteristics and symbols
(Improvement direction)
Effect on circuits Si material SiC material
FRD* SBD SBD

SBD
(Improved JBS structure)

Reverse voltage, VR
(high)
Voltage surge during switching ★★★★ ★★★★★ ★★★★★
Leakage current, IR
(low)
Thermal runaway ★★ ★★★ ★★★★★
Forward Voltage, VF
(low)
Considerable effect on efficiency ★★★ ★★★★★ ★★★ ★★★
Reverse recovery time, trr
(low)
Considerable effect on efficiency ★★★★★ ★★★★★ ★★★★★
Surge current, IFSM
(large)
Inrush current when switching on

★★★★★

★★ ★★★

The greater the number of ★, the better.

* FRD: Fast recovery diode

SiC schottky barrier diodes

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