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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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SiC MOSFETs

Wide band gap power semiconductors leverage the benefits of Toshiba’s second-generation SiC (silicon carbide) device structure to achieve attractive benefits for high voltage products. Toshiba’s SiC MOSFETs offer improved reliability, superior operation in high-temperature environments, high-speed switching and low on-resistance characteristics compared to conventional Si (silicon) power semiconductors. SiC MOSFETs are suitable for a variety of high-power, high-efficiency applications including industrial power supplies, solar inverters, and UPS.

1200V SiC MOSFET TW070J120B

TO-3P(N)

Fabricated with Toshiba’s second-generation chip design[1], which improves the reliability of SiC MOSFETs, the new device realizes low input capacitance, a low gate-input charge, and low drain-to-source ON-resistance.

[1] Toshiba news release on July 30, 2020: “Toshiba’s New Device Structure Improves SiC MOSFET Reliability

 (Unless otherwise specified, Ta=25℃)

Part

number

Package

Absolute maximum ratings

Electrical Characteristics

VDSS

(V)

ID

(A)

RDS(ON)

typ.

(mΩ)

Vth
(V)

Qg

typ.

(nC)

Ciss
typ. (pF)

VDSF

typ.

(V)

TW070J120B

TO-3P(N)

1200

36.0

70

4.2 to 5.8

67

1680

-1.35

[Note]
VDSS: Drain-source voltage, ID: Drain current (DC) @Tc=25℃, RDS(ON): Drain-source On-resistance @VGS=20V, 
Vth: Gate threshold voltage @VDS=10V, ID=20mA, Qg: Total gate charge, 
Ciss: Input capacitance, VDSF: Diode forward voltage @IDR=10A, VGS=-5V

SiC MOSFETs Contribute to lower power consumption for industrial applications
Toshiba’s TW070J120B 1200V SiC MOSFET features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption.
Loss comparison of turn-off switching
Loss comparison of turn-off switching

Documents

Technical topics

Applications

LED Lighting
Air Conditioner
Uninterruptible power supply

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