A Schottky barrier diode is a low-VF diode formed by the junction of a semiconductor with a metal. Toshiba has an extensive lineup for a wide range of reverse voltages from small signal products to power-line products. Toshiba's Schottky Barrier Diodes are low-VF and low-IR types which can help to improve efficiency and power saving.
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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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DC-DC / MOSFET / reference design
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