1.6kW 48V Output Telecommunication Equipment Power Supply(Upgraded)

Toshiba's latest power devices and digital isolators are incorporated into this 1.6kW, 48V power supply reference design for telecommunications equipment. Compared with a conventional design using the same topology, it delivers higher efficiency at high load conditions. Compact components enable deployment in various form factors, including standard 1U power supplies. Comprehensive design resources, including schematics, PCB layout data, and design guidelines, help accelerate power supply development.

Board Appearance
Board Appearance
TRS8A65F TRS8A65F TRS8A65F TK125N60Z1 TK125N60Z1 TK125N60Z1 TK095N65Z5 TK095N65Z5 TK095N65Z5 TK095N65Z5 TK095N65Z5 TPM7R10CQ5 TPM7R10CQ5 TPM7R10CQ5 DCL540C01 TPM1R908QM TPM1R908QM

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Features

  • Provides appropriate power devices (MOSFET and SiC diode) and digital Isolator totally
  • By utilizing compact components, this design supports a wide range of enclosure sizes and applications, including standard 1U power supplies.
  • Total efficiency 95.2% (Vin = 230V at 100% load condition)

Specifications

Input voltage AC 90 to 264V
Output voltage DC 48V
Output power 1.6kW
Circuit topology Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, ORing Circuit for Output
Efficiency Curve
Efficiency Curve

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Application Area – Qty Description
Power MOSFET (N-ch 500V<VDSS≤700V) PFC Circuit・2 N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-247, DTMOSⅥ
SiC Schottky barrier diode PFC Circuit・2 650 V/8 A SiC Schottky Barrier Diode, TO-220F-2L
Power MOSFET (N-ch 500V<VDSS≤700V) PSFB Circuit・4 N-ch MOSFET, 650 V, 0.095 Ω@10V, TO-247, DTMOSⅥ
Power MOSFET (N-ch single 60V<VDSS≤150V) PSFB Circuit・4 N-ch MOSFET, 150 V, 0.0071 Ω@10V, Qrr=43nC@100A/μs, SOP Advance(E), U-MOSⅩ-H
Standard Digital Isolators Communication between primary-side and secondary-side・1 HIGH SPEED QUAD CHANNEL DIGITAL ISOLATORS, High-speed, 150 Mbps, 5000 Vrms, 16pin SOIC Wide body
Power MOSFET (N-ch single 60V<VDSS≤150V) ORing Circuit・3 N-ch MOSFET, 80 V, 0.0019 Ω@10V, SOP Advance(E), U-MOSⅩ-H

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

Applications

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.
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