TCR1HF50B

Low Dropout (LDO) Linear Voltage Regulator

  • Related Reference Design(4)

Description

Application Consumer equipment / Industrial power supply / Mobile equipment / Camera/Sensor power supply / General purpose power supply
Feature Wide range input voltage / Low dropout voltage / Low quiescent current / Fast load transient response
Output Type Fixed Output
Overcurrent protection Y
Thermal shutdown Y
Inrush current reduction Y
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-25 (SMV)
Package Image Toshiba TCR1HF50B Low Dropout (LDO) Linear Voltage Regulator product SMV package image
JEITA SC-74A
Package Code SOT-25
Pins 5
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×1.1
Package Dimensions View
Land pattern dimensions View
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Input Voltage VIN 40 V
Power Dissipation (mounted on glass-epoxy board(25.4mm×25.4mm)) PD 580 mW

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Operating Output Current (Max) IOUT - 150 mA
Operating Input Voltage * VIN - 4 to 36 V
Output Voltage (Typ.) VOUT - 5.0 V
Output Voltage Lineup VOUT - 1.8 to 5.0 V
Quiescent Current (Typ.) * IB(ON) IOUT=0mA 1.0 μA
Stand-by Current (Typ.) * IB(OFF) - 0.27 μA
Dropout Voltage (Typ.) * VDO IOUT=0.15A 415 mV
Ripple Rejection Ratio (Typ.) * R.R. f=1kHz 60 dB
Output Noise Voltage (Typ.) * VNO - 100 μVrms
Operating Temperature Topr - -40 to 125
Output Capacitance COUT - ≥0.47 μF

 * Representative value, Please refer to the datasheet for details.

Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Mar,2026

May,2026

May,2026

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS Note Stock Check Search
TCR1HF50B,LM 3000 Yes General Use

Reference Design

PCB photo example of Power multiplexer circuit
Power multiplexer circuit
In this reference design, a Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB. MOSFET gate driver ICs, eFuse ICs, zener diodes and small package MOSFETs selected from Toshiba's diverse lineup are used create ideal diode like characteristics with BBM and MBB switching.
PCB photo example of Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET
This power multiplexer circuit with 2 inputs and 1 output is realized on a small board. A new power multiplexer circuit usign common-drain MOSFET has been added to the already developed power multiplexer circuit reference design. These reference circuits allow switching between BBM and MBB modes by combining optimal devices such as MOSFET gate driver ICs and zener diodes from our diverse product lineup.
This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have increasingly replaced conventional Si power devices in power converters, such as industrial motor drives and railway traction inverters, to reduce size and power loss.
This gate driver is designed to drive such modules safely and includes multiple protection functions. It uses the pre-driver coupler TLP5231 together with external buffer MOSFETs, enabling large gate-drive current while providing isolation for high-current/high-voltage SiC MOSFET modules. The design offers a two-channel configuration (high-side and low-side) on a compact 62 mm × 100 mm board that can be integrated into our Dual MOSFET modules.
We also provide key design considerations, usage and adjustment guidance for each circuit block, along with circuit diagrams and PCB pattern information to support your design work. Note: new designs using 2SC6026MFV are Not Recommended for New Design (NRND) as of April 26.
Sensorless Sinusoidal Brushless Motor Drive Circuit Using TC78B011FTG
Sensorless Sinusoidal Brushless Motor Drive Circuit Using TC78B011FTG
This reference design provides design guide, data and other contents of a brushless motor drive circuit using sensorless sinusoidal PWM predriver IC for 3-phase brushless motor. This design allows easy configuration of the motor pre-driver using a GUI.

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs

Notes

back to list
Membership registration required
A new window will open