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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F

Example of TPD7106F Application Circuit
Example of TPD7106F Application Circuit
Simulation Waveform (Normal Operation)
Simulation Waveform (Normal Operation)


  • Introduction of semiconductor-relay application with TPD7106F and power MOSFET
  • Description of operation with the power supply reverse connection
  • Example of 200A capable semiconductor-relay application
  • Operation confirmation by spice simulation


  • Semiconductor-relay drive circuit using TPD7106F and 6pcs of power MOSFET, TKR74F04PB
  • Reverse connection of power supply assuming reverse connection of the car battery
  • Input voltage : 12V
  • Maximum load current : 200A
  • Built-in charge pump circuit

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Name Date

Design, File

“Design・File” contains the contents listed below.

Name Date

Toshiba items

Part Number Device Category Portion Usage Description
TPD7106F Intelligent Power Ics 1 1 channel High-Side N channel Power MOSFET Gate Driver/VDD= -18 to 27V/Built-in charge pump circuit /SSOP16
TKR74F04PB MOSFET 6 U-MOS IX-H/40V/0.6mΩ(typ)@VGS=10V/TO-220SM(W)  



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