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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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When the gate-source voltage of a MOSFET exceeds a certain voltage (threshold voltage, |Vth|), the drain-source resistance decreases, causing the MOSFET to turn on. This drain-source resistance is called on-resistance.
The direction of the voltage applied across gate and source differs between n-channel and p-channel MOSFETs. The following figure shows the condition under which a MOSFET turns on.
N-channel MOSFET: When the gate voltage is higher than the source voltage by |Vth|, the n-channel MOSFET turns on.
P-channel MOSFET: When the gate voltage is lower than the source voltage by |Vth|, the p-channel MOSFET turns on.
The following figure shows an inverter, a basic building block of CMOS logic ICs.
When VIN is at the VCC or GND level, either the p-channel or n-channel MOSFET is off. Therefore, very little current (ICC) flows between VCC and GND. When the input is in the steady state (at the VCC or GND level), ICC is very low.
The following figure shows the VIN-ICC curve of CMOS.
When VIN is between 0and |Vth| or between VCC-|Vth| and VCC, very little current (ICC) flows between VCC and GND. However, when VIN is between |Vth| and VCC-|Vth|, shoot-through current flows from the p-channel MOSFET to the n-channel MOSFET, increasing ICC. Therefore, care should be exercised to ensure that excessively slowly changing input is not applied to VIN.