Cross Reference Search
require 3 characters or more.
About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Keyword Search
Parametric Search
Stock Check & Purchase
Select Product Categories
Select Application
Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.
New Products / News
What is the bootstrap circuit in high-voltage IPDs?
A bootstrap circuit is used for the gate drive of the high-side (upper-leg) devices of a bridge circuit.
Generally, the gate of N-channel MOSFETs or IGBTs is driven at a voltage 10 to 15 V higher than the source voltage or emitter voltage. When a high-side N-channel device turns on, the source (or emitter) voltage becomes equal to that of the high-voltage power supply (VBB). Therefore, for the gate drive of the high-side device, a power supply with very high voltage, which is equal to the sum of VBB and the gate-source (gate-emitter) voltage, is required. The following shows a bootstrap circuit. When the low-side (lower-leg) device turns on, the bootstrap capacitor (C) stores charge, which is used to drive the gate of the high-side device.
Turning on the low-side device causes the bootstrap capacitor to be charged.
The charge stored in the bootstrap capacitor is used to drive the high-side device.
Figure 2 Bootstrap operation
For High-voltage IPD’s bootstrap circuit, please refer to “High voltage intelligent power device application note”
A new window will open