-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
ApplicationsAutomotive
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
IndustrialInfrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
Consumer/PersonalIoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
-
Knowledge
Knowledge
- Where To Buy View
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
What is the bootstrap circuit in high-voltage IPDs?
A bootstrap circuit is used for the gate drive of the high-side (upper-leg) devices of a bridge circuit.
Generally, the gate of N-channel MOSFETs or IGBTs is driven at a voltage 10 to 15 V higher than the source voltage or emitter voltage. When a high-side device turns on, the source (or emitter) voltage becomes equal to that of the high-voltage power supply (VBB). Therefore, a power supply with very high voltage, which is equal to the sum of VBB and the gate-source (gate-emitter) voltage, is required for the gate drive of the high-side device. The following shows a bootstrap circuit. When the low-side device turns on, the bootstrap capacitor (C) stores charge, which is used to drive the gate of the high-side device.
Related Links
The following documents also contain related information.
