SSM6K809R

Small Low ON resistance MOSFETs

  • Related Reference Design(1)

Description

Application Scope DC-DC Converters / Power Management Switches
Feature Low drain-source on-resistance
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSOP6F
Package Image TSOP6F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 60 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 6.0 A
Power Dissipation PD 1.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 69
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 51
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 36
Input capacitance (Typ.) Ciss - 550 pF
Total gate charge (Typ.) Qg VGS=10V 9.3 nC

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May,2020

Mar,2021

Mar,2022

May,2023

May,2023

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Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
Note
SSM6K809R,LF 3000 Yes - General Use
SSM6K809R,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)
SSM6K809R,LXHF 3000 - Yes Yes Automotive Use

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Frequently Asked Questions

FAQs

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