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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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5 kW Isolated Bidirectional DC-DC Converter

Simple Block Diagram
Simple Block Diagram
Efficiency Curve
Efficiency Curve

Description

High Voltage Side DC 732V to 768V
Low Voltage Side DC 396V to 404V
Rated Power 5.0kW
Circuit Configuration Dual Active Bridge(DAB)Conversion Method

Features

images
  • Efficiency:97% (Vin = 750 V, 100% load)
  • Outline size:565 mm x 360 mm x 270 mm
  • Total solution of SiC MOSFET, MOSFET, Smart Gate Driver and Isolation Amp.

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Design, File

“Design・File” contains the contents listed below.

*1:Actual PCB was designed on CR5000BD. The other files were made from CR5000BD file.
*2:The data was generated on CR5000BD.

Toshiba items

Part Number Device Category Portion Usage Description

TW070J120B

SiC MOSFET

High voltage side switch・4

1200 V/70 mΩ (typ.) @VGS = 20 V/TO-3P(N)

TK49N65W5

MOSFET

Low voltage side switch・4

650 V/51 mΩ (typ.) @VGS = 10 V/TO-247

TLP5214A Smart gate driver Gate drive・8 Photocoupler  (photo-IC output) /Creepage and clearance 8 mm/High temperature 110 ℃ operation/SO16L

TLP7920

Isolation amplifier

Voltage detection・2

Photocoupler (isolation amplifier) /Analog output/DIP8

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