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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Absolute Maximum Ratings

Absolute Maximum Ratings (Ta = 25℃)

Characteristic Symbol Rating Unit
1. Peak reverse voltage VRM 420 V
2. Reverse voltage VR 400 V
3. Peak forward current IFM 300 mA
4. Average rectified forward current IO 100 mA
5. Forward surge current (10ms) IFSM 2 A
6. Power dissipation P 100 mW
7. Junction temperature Tj 125
8. Storage temperature Tstg -55 to 125

Definitions of the Terms

  1. Peak reverse voltage, VRM: Maximum allowable peak voltage that can be applied across the cathode and anode terminals
  2. Reverse voltage, VR: Maximum allowable voltage of direct current that can be applied across the cathode and anode terminals
  3. Peak forward current, IFM: Maximum allowable peak current that can flow from anode to cathode
  4. Average rectified forward current, IO: Maximum allowable average current that can flow from anode to cathode
  5. Forward surge current, IFSM: Maximum allowable current of a surge pulse that can flow instantaneously (Generally, the width of the applied surge pulse is specified.)
  6. Power dissipation: Maximum allowable power dissipation, which decreases with ambient temperature
  7. Junction temperature: Maximum allowable junction temperature, which varies depending on the power dissipation that occurs when a diode is forward- or reverse-biased
  8. Storage temperature: Temperature range in which a diode can be stored with no voltage applied
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