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Electrical characteristics of MOSFETs (Static Characteristics RDS(ON))


Drain-source on-state resistance (RDS(ON)

The resistance across drain and source when the MOSFET is in the "on" state



Measurement of forward transfer admittance

The specified constant drain current, ID, is applied until VGSreaches the specified voltage. At this point, drain-source voltage is measured. On-state resistance is calculated by dividing it by the value of drain current, ID.
Note: Keep the open-circuit voltage of the constant-current source below the drain-source breakdown voltage.


Measurement of forward transfer admittance

Measurement of forward transfer admittance

Gate-source voltage, VGS, is increased until drain current, ID, reaches the specified value. Then, VGSis changed only slightly, and the resulting change in drain current, ID, is measured.

Data sheet description

Characteristics Symbol Test Conditions Min Typ Max Unit
Drain-source on-state resistance RDS(ON) VGS = 4.5 V, ID = 50 A 0.95 1.35
VGS = 10 V, ID = 50 A 0.65 0.80