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Electrical characteristics of MOSFETs (Static Characteristics RDS(ON))
Drain-source on-state resistance (RDS(ON)）
The resistance across drain and source when the MOSFET is in the "on" state
VDS(ON)measurement
The specified constant drain current, ID, is applied until VGSreaches the specified voltage. At this point, drain-source voltage is measured. On-state resistance is calculated by dividing it by the value of drain current, ID.
Note: Keep the open-circuit voltage of the constant-current source below the drain-source breakdown voltage.
Measurement of forward transfer admittance
Gate-source voltage, VGS, is increased until drain current, ID, reaches the specified value. Then, VGSis changed only slightly, and the resulting change in drain current, ID, is measured.
Data sheet description
| Characteristics | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-source on-state resistance | RDS(ON) | VGS = 4.5 V, ID = 50 A | — | 0.95 | 1.35 | mΩ |
| VGS = 10 V, ID = 50 A | — | 0.65 | 0.80 |
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