What is RDS(ON), MOSFET drain-source on-resistance?

This is the resistance between the drain-source when MOSFET is on at the specified gate-voltage.

To measure the drain-source resistance (RDS(ON)), first, apply a voltage that exceeds the specified threshold voltage (Vth) between the gate and source. Next, apply the specified current source (ID) and measure the voltage drop (VDS) between the drain and source.
Using these measurements, you can calculate the RDS(ON) for the specified gate-source voltage (VGS) using the formula: RDS(ON)=VDS/ID.

NOTE) Make sure that the open voltage of the constant-current power supply is equal to or less than the withstand voltage between the drain and the ground.

Fig. 1: Measuring V<sub>DS(ON)</sub>
Fig. 1: Measuring VDS(ON)
Fig. 2: Forward transfer admittance | Yfs | How to obtain
Fig. 2: Forward transfer admittance | Yfs | How to obtain
Fig. 3: Forward transfer admittance measurement
Fig. 3: Forward transfer admittance measurement

Please also refer to the following page.

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