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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Electrical characteristics of MOSFETs (Static Characteristics RDS(ON))

VDS(ON)measurement

Drain-source on-state resistance (RDS(ON)

The resistance across drain and source when the MOSFET is in the "on" state

 

VDS(ON)measurement

Measurement of forward transfer admittance

The specified constant drain current, ID, is applied until VGSreaches the specified voltage. At this point, drain-source voltage is measured. On-state resistance is calculated by dividing it by the value of drain current, ID.
Note: Keep the open-circuit voltage of the constant-current source below the drain-source breakdown voltage.

 

Measurement of forward transfer admittance

Measurement of forward transfer admittance

Gate-source voltage, VGS, is increased until drain current, ID, reaches the specified value. Then, VGSis changed only slightly, and the resulting change in drain current, ID, is measured.

Data sheet description

Characteristics Symbol Test Conditions Min Typ Max Unit
Drain-source on-state resistance RDS(ON) VGS = 4.5 V, ID = 50 A 0.95 1.35
VGS = 10 V, ID = 50 A 0.65 0.80