What is RDS(ON), MOSFET drain-source on-resistance?

This is the resistance between the drain-source when MOSFET is on at the specified gate-voltage.

The on-resistor RDS(ON) is calculated by dividing the specified drain current ID by the drain current ID, increasing VGS to the specified voltage, measuring the drain-to-source voltage, and calculating the on-resistor.

NOTE) Make sure that the open voltage of the constant-current power supply is equal to or less than the withstand voltage between the drain and the ground.

Fig. 1: Measuring V<sub>DS(ON)</sub>
Fig. 1: Measuring VDS(ON)
Fig. 2: Forward transfer admittance | Yfs | How to obtain
Fig. 2: Forward transfer admittance | Yfs | How to obtain
Fig. 3: Forward transfer admittance measurement
Fig. 3: Forward transfer admittance measurement

Please also refer to the following page.

Back to FAQs of MOSFETs / Bipolar Transistors / IGBTs

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