Toshiba Electronic Devices & Storage Corporation just released RF SPDT switching TCWA1225G with a compact package. TCWA1225G uses Toshiba original CMOS Process for RF transmission path switching circuits used in telecommunications base stations and radio communications equipment. Starts shipping.
In recent years, telecommunications base stations have introduced Massive MIMO[Note 1] and other that use several transmitting and receiving antennae to realize ultra-high-speed and ultra-large-capacity radio communications services. This is represented by 5G. Individual antennas are also increasingly composed of super-multi-element antennas and complex signal transmission paths. When switching between such complex transmission paths, RF switching is generally used. However, this RF must have low insertion-loss, high input-power, etc. It is also required to be small enough so that the number of RF switch will not increase, and the size of antennae and devices will not increase.
The new TCWA1225G offers a high-power, Peak Power Handling Rating 46dBm[Note 2] in a small package of 1.9mm×1.9mm (typ.) , thus contributing to the miniaturization of equipment. In addition, since the insertion loss 0.6dB[Note 3] and the power consumption current are as low as 50μA[Note 4], it contributes to reducing the loss and power consumption of equipment.
Switching can be easily controlled via the built-in GPIO control interface.
[Note 1] Multiple Input Multiple Output
[Note 2] 8dB PAR (Peak-to-Average Ratio)
[Note 3] 5GHz, typical
[Note 4] VDD=3.6V, typical
2.0mm x 2.0mm (typ.) is the smallest Competitor's alternative with equivalent performance for high-power input RF SPDT switches, but 1.9mm × 1.9mm (typ.) is a small WCSP[Note 5] with a of approximately 10% less mounting area. The highly versatile 0.5mm also eliminates the need for sophisticated mounting techniques and reduces the possibility of short-circuit between terminals during board mounting. In addition, RF terminal, power supply, and control terminal are arranged on the periphery of the package to prevent complicated pattern-design of the board.
[Note 5] Wafer level Chip Scale Package
In order to achieve both miniaturization and high-power inputting, we adopted Toshiba original CMOS process and further optimized the switching circuitry. This has resulted in a small size and 46dBm high-power input 1.9mm × 1.9mm (typ.)[Note 6] compared to 2.0mm x 2.0mm (typ.) packaged and 42dBm peak input power.
In the transmission path switching circuitry of RF signals, RF signal must be made extremely small to prevent a decrease in transmit power and a deterioration in receiver sensibility. TCWA1225G is to achieve 0.6dB (typ.) @5GHz and an insertion-loss that is approximately 0.05dB smaller than Competitor's alternative with equivalent performance.[Note 6] This is achieved by using Toshiba original CMOS Process.
[Note 6] Comparison with similar products. Our survey as of June 2024.
(Ta=25°C)
Product Number |
||
---|---|---|
Data Sheet |
||
Absolute maximum ratings |
Supply voltage Range VDD(V) |
-0.3 to 3.9 |
Logic Input (LS, CTRL Pad) Vl(V) |
-0.3 to 3.9 |
|
Peak Power Handling (8dB PAR) Ppk(dBm) |
46 |
|
Operating ranges | Supply voltage VDD(V) |
3.0 to 3.6 |
Operation Temperature Topr(°C) |
-40 to 95 |
|
Electrical characteristics (Typ.)
|
Insertion loss IL(dB)@5GHz |
0.6 |
Isolation ISO(dB)@5GHz |
46 |
|
VSWR (-) |
1.2 |
|
Input 1dB compression IP1dB(dBm)@2.6GHz |
47 |
|
Input IP3 IIP3(dBm)@2.6GHz |
74 |
|
Input IP2 IIP2(dBm)@2.6GHz |
128 |
|
Power Consumption Current IDC(μA)@VDD=3.6V |
50 |
|
Package |
Toshiba name |
|
Sizing(mm) Typ. |
1.9 × 1.9 |
|
Inventory retrieval & Web small buy |
Product detail
Package
*Company names, product names, and service names may be trademarks of their respective companies.
*Information contained in this document (product price/specifications, service details, inquiries, etc.) is as of the date of presentation. This manual is subject to change without prior notice.