HN1B10NU

New Product

Transistor for low frequency small-signal amplification 2 in 1

Description

Application Scope General-purpose
Polarity PNP + NPN
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-1118 (UDFN6)
Package Image Toshiba HN1B10NU Transistor for low frequency small-signal amplification 2 in 1 product UDFN6 package image
Package Code SOT-1118
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.0×0.75
Package Dimensions View
Land pattern dimensions View
SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>(Note1)(Note2)

Download from SamacSys
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current (Q1) IC 1 A
Collector Current (Q2) IC -1 A
Collector-emitter voltage (Q1) VCEO 50 V
Collector-emitter voltage (Q2) VCEO -50 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
DC Current Gain hFE (Q1) (Max) hFE IC=0.1A
VCE=2V
1000 -
DC Current Gain hFE (Q1) (Min) hFE IC=0.1A
VCE=2V
400 -
DC Current Gain hFE (Q2) (Max) hFE IC=-0.1A
VCE=-2V
500 -
DC Current Gain hFE (Q2) (Min) hFE IC=-0.1A
VCE=-2V
200 -
Collector Emitter Saturation Voltage (Q1) (Max) VCE(sat) IB=6mA
IC=0.3A
0.12 V
Collector Emitter Saturation Voltage (Q2) (Max) VCE(sat) IB=6mA
IC=-0.3A
-0.2 V
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Mar,2026

Mar,2026

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