HN1B10NU

Transistor for low frequency small-signal amplification 2 in 1

產品概要

Application Scope General-purpose
Polarity PNP + NPN
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOT-1118 (UDFN6)
Package Image 東芝 HN1B10NU Transistor for low frequency small-signal amplification 2 in 1產品 UDFN6 封裝圖片
Package Code SOT-1118
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.0×0.75
Package Dimensions 檢視
Land pattern dimensions 檢視
SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*1 *2

Download from SamacSys
*1 *2

 Please refer to the link destination to check the detailed size.

*1

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Collector Current (Q1) IC 1 A
Collector Current (Q2) IC -1 A
Collector-emitter voltage (Q1) VCEO 50 V
Collector-emitter voltage (Q2) VCEO -50 V

電器特性

項目 符號 條件 單位
DC Current Gain hFE (Q1) (Max) hFE IC=0.1A
VCE=2V
1000 -
DC Current Gain hFE (Q1) (Min) hFE IC=0.1A
VCE=2V
400 -
DC Current Gain hFE (Q2) (Max) hFE IC=-0.1A
VCE=-2V
500 -
DC Current Gain hFE (Q2) (Min) hFE IC=-0.1A
VCE=-2V
200 -
Collector Emitter Saturation Voltage (Q1) (Max) VCE(sat) IB=6mA
IC=0.3A
0.12 V
Collector Emitter Saturation Voltage (Q2) (Max) VCE(sat) IB=6mA
IC=-0.3A
-0.2 V
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May,2026

May,2026

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