N-channel Power MOSFETs for Industrial Equipment Reduce On-resistance by Using SOP Advance(E) Package

N-channel Power MOSFETs for Industrial Equipment Reduce On-resistance by Using SOP Advance(E) Package

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched an 80V N-channel power MOSFET "TPM1R908QM” and a 150V N-channel power MOSFET "TPM7R10CQ5,” which adopt the new SOP Advance(E) package. These products are suitable for switched-mode power supplies for industrial equipment such as data centers and communication base stations.

The new SOP Advance(E) package has reduced package resistance by approximately 65% and thermal resistance by approximately 15% compared to Toshiba’s existing SOP Advance(N) package. The 80V TPM1R908QM reduces drain-source On-resistance by approximately 21% and channel-case thermal resistance by approximately 15%, compared to Toshiba’s existing product, “TPH2R408QM[1],” with the same voltage. Similarly, the 150V TPM7R10CQ5 reduces drain-source On-resistance by approximately 21% and channel-case thermal resistance by approximately 15%, compared to Toshiba’s existing product, “TPH9R00CQ5[1],” with the same voltage. In addition, by reducing the On-resistance itself and suppressing the temperature rise through reduced thermal resistance, the On-resistance with positive temperature characteristics can also be reduced. This achieves lower loss and higher efficiency in industrial equipment such as switched-mode power supplies.

Furthermore, Toshiba offers tools that support circuit design for switched-mode power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.

Toshiba will continue to expand its lineup of power MOSFETs that enable more efficient power supplies, thereby helping to reduce the power consumption of equipment.

Note:
[1] SOP Advance(N) package product

 

Features

  1. Reduced On-resistance RDS(ON) by approximately 21% compared to Toshiba’s existing products
  2. Reduced channel-case thermal resistance Rth(ch-c) by approximately 15% compared to Toshiba’s existing products

Features Explanation

1. Reduced On-resistance RDS(ON) by approximately 21% compared to Toshiba’s existing products

The 80V TPM1R908QM reduces On-resistance between drain and source by approximately 21% compared to Toshiba’s existing product, the TPH2R408QM, with the same voltage. Similarly, the 150V TPM7R10CQ5 reduces On-resistance between drain and source by approximately 21% compared to Toshiba’s existing product, the TPH9R00CQ5, with the same voltage. Reducing the on-resistance achieves lower loss and higher efficiency in applications.

Figure 1. Comparison of drain-source On-resistance (80V)
Figure 1. Comparison of drain-source On-resistance (80V)
Figure 2. Comparison of drain-source On-resistance (150V)
Figure 2. Comparison of drain-source On-resistance (150V)

2. Reduced channel-case thermal resistance Rth(ch-c) by approximately 15% compared to Toshiba’s existing products

Figure 3. Comparison of thermal resistance between channel and case
Figure 3. Comparison of thermal resistance between channel and case

The 80V TPM1R908QM is reduced thermal resistance by approximately 15% compared to Toshiba’s existing product, the TPH2R408QM, with the same voltage. Similarly, the 150V TPM7R10CQ5 is reduced thermal resistance by approximately 15% compared to Toshiba’s existing product, the TPH9R00CQ5, with the same voltage. Reducing thermal resistance leads to low On-resistance with positive temperature characteristics due to suppressed temperature rise allowing lower loss and higher efficiency in applications.

Applications

Industrial Equipment

  • Switched-mode power supplies for data centers
  • Switched-mode power supplies for communication base stations

Main Specifications

(Ta=25°C unless otherwise specified)

Part number TPM1R908QM TPM7R10CQ5
Absolute
maximum
ratings		 Drain-source voltage VDSS (V) 80 150
Drain current (DC) ID (A) Tc=25°C 238 120
Channel temperature Tch (°C) 175 175
Thermal
characteristics		 Channel-to-case thermal
resistance Rth(ch-c) (°C/W)		 Tc=25°C Max 0.6 0.6
Electrical
characteristics		 Drain-source On-resistance
RDS(ON) (mΩ)		 VGS=10V Max 1.9 7.1
VGS=8V Max - 8.7
VGS=6V Max 2.8 -
Total gate charge Qg (nC) VGS=10V Typ. 108 57
Gate switch charge Qsw (nC) Typ. 35 18
Output charge Qoss (nC) Typ. 111 106
Input capacitance Ciss (pF) Typ. 7360 4390
Reverse recovery time trr (ns) Typ. 57 45
Reverse recovery charge Qrr (nC) Typ. 71 43
Package Name SOP Advance(E)
Size (mm) Typ. 4.9×6.1
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