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N-channel Power MOSFETs for Industrial Equipment Reduce On-resistance by Using SOP Advance(E) Package
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched an 80V N-channel power MOSFET "TPM1R908QM” and a 150V N-channel power MOSFET "TPM7R10CQ5,” which adopt the new SOP Advance(E) package. These products are suitable for switched-mode power supplies for industrial equipment such as data centers and communication base stations.
The new SOP Advance(E) package has reduced package resistance by approximately 65% and thermal resistance by approximately 15% compared to Toshiba’s existing SOP Advance(N) package. The 80V TPM1R908QM reduces drain-source On-resistance by approximately 21% and channel-case thermal resistance by approximately 15%, compared to Toshiba’s existing product, “TPH2R408QM[1],” with the same voltage. Similarly, the 150V TPM7R10CQ5 reduces drain-source On-resistance by approximately 21% and channel-case thermal resistance by approximately 15%, compared to Toshiba’s existing product, “TPH9R00CQ5[1],” with the same voltage. In addition, by reducing the On-resistance itself and suppressing the temperature rise through reduced thermal resistance, the On-resistance with positive temperature characteristics can also be reduced. This achieves lower loss and higher efficiency in industrial equipment such as switched-mode power supplies.
Furthermore, Toshiba offers tools that support circuit design for switched-mode power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba will continue to expand its lineup of power MOSFETs that enable more efficient power supplies, thereby helping to reduce the power consumption of equipment.
Note:
[1] SOP Advance(N) package product
Features
- Reduced On-resistance RDS(ON) by approximately 21% compared to Toshiba’s existing products
- Reduced channel-case thermal resistance Rth(ch-c) by approximately 15% compared to Toshiba’s existing products
Features Explanation
1. Reduced On-resistance RDS(ON) by approximately 21% compared to Toshiba’s existing products
The 80V TPM1R908QM reduces On-resistance between drain and source by approximately 21% compared to Toshiba’s existing product, the TPH2R408QM, with the same voltage. Similarly, the 150V TPM7R10CQ5 reduces On-resistance between drain and source by approximately 21% compared to Toshiba’s existing product, the TPH9R00CQ5, with the same voltage. Reducing the on-resistance achieves lower loss and higher efficiency in applications.
2. Reduced channel-case thermal resistance Rth(ch-c) by approximately 15% compared to Toshiba’s existing products
The 80V TPM1R908QM is reduced thermal resistance by approximately 15% compared to Toshiba’s existing product, the TPH2R408QM, with the same voltage. Similarly, the 150V TPM7R10CQ5 is reduced thermal resistance by approximately 15% compared to Toshiba’s existing product, the TPH9R00CQ5, with the same voltage. Reducing thermal resistance leads to low On-resistance with positive temperature characteristics due to suppressed temperature rise allowing lower loss and higher efficiency in applications.
Applications
Industrial Equipment
- Switched-mode power supplies for data centers
- Switched-mode power supplies for communication base stations
Main Specifications
(Ta=25°C unless otherwise specified)
| Part number | TPM1R908QM | TPM7R10CQ5 | |||
|---|---|---|---|---|---|
| Absolute maximum ratings |
Drain-source voltage VDSS (V) | 80 | 150 | ||
| Drain current (DC) ID (A) | Tc=25°C | 238 | 120 | ||
| Channel temperature Tch (°C) | 175 | 175 | |||
| Thermal characteristics |
Channel-to-case thermal resistance Rth(ch-c) (°C/W) |
Tc=25°C | Max | 0.6 | 0.6 |
| Electrical characteristics |
Drain-source On-resistance RDS(ON) (mΩ) |
VGS=10V | Max | 1.9 | 7.1 |
| VGS=8V | Max | - | 8.7 | ||
| VGS=6V | Max | 2.8 | - | ||
| Total gate charge Qg (nC) | VGS=10V | Typ. | 108 | 57 | |
| Gate switch charge Qsw (nC) | Typ. | 35 | 18 | ||
| Output charge Qoss (nC) | Typ. | 111 | 106 | ||
| Input capacitance Ciss (pF) | Typ. | 7360 | 4390 | ||
| Reverse recovery time trr (ns) | Typ. | 57 | 45 | ||
| Reverse recovery charge Qrr (nC) | Typ. | 71 | 43 | ||
| Package | Name | SOP Advance(E) | |||
| Size (mm) | Typ. | 4.9×6.1 | |||
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