XPN7R104NC

Power MOSFET (N-ch single 30V<VDSS≤60V)

  • Related Reference Design(1)

Description

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSON Advance(WF)
Package Image TSON Advance(WF)
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.6×0.85
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 20 A
Power Dissipation PD 65 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 14.2
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 7.1
Input capacitance (Typ.) Ciss - 1290 pF
Total gate charge (Typ.) Qg VGS=10V 21 nC
Purchase and Sample
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Document

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Jun,2021

Jul,2021

Mar,2023

Sep,2022

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
XPN7R104NC,L1XHQ 5000 - Yes Yes

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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