TPCP8407

Not Recommended for New Design

Power MOSFET (N-ch + P-ch complementary)

Description

Application Scope Motor Drivers / Mobile Equipments
Polarity N-ch + P-ch
Generation U-MOSⅣ / U-MOSⅥ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name PS-8
Package Image PS-8
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 40 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 5.0 A
Drain-Source voltage (Q2) VDSS -40 V
Gate-Source voltage (Q2) VGSS +10/-20 V
Drain current (Q2) ID -4.0 A
Power Dissipation PD 1.77 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 3.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=6V 62.8
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 36.3
Input capacitance (Q1) (Typ.) Ciss - 505 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 11.8 nC
Gate threshold voltage (Q2) (Max) Vth - -3.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 56.8
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-6V 82.2
Input capacitance (Q2) (Typ.) Ciss - 810 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 18 nC

Document

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Sep,2016

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