不推薦用於新設計
Power MOSFET (N-ch + P-ch complementary)
| Application Scope | Motor Drivers / Mobile Equipments |
|---|---|
| Polarity | N-ch + P-ch |
| Generation | U-MOSⅣ / U-MOSⅥ |
| Internal Connection | Independent |
| AEC-Q101 | Qualified(*) |
| RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
新設計中推薦使用以下產品。
| 器件型號 | 兼容性 | 備註 |
|---|---|---|
| SSM6L820R | Different package and similar characteristics | Different Drain-source voltage |
| Toshiba Package Name | PS-8 |
|---|---|
| Package Image |
|
| Pins | 8 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.9×2.8×0.8 |
| Package Dimensions | 檢視 |
| Land pattern dimensions | 檢視 |
| Ultra Librarian® CAD model (Symbol, Footprint and 3D model) |
![]() Download from UltraLibrarian® in your desired CAD format |
Please refer to the link destination to check the detailed size.
|
(Note1) |
Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®. |
|
(Note2) |
Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website. |
| 項目 | 符號 | 值 | 單位 |
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 40 | V |
| Gate-Source voltage (Q1) | VGSS | +/-20 | V |
| Drain current (Q1) | ID | 5.0 | A |
| Drain-Source voltage (Q2) | VDSS | -40 | V |
| Gate-Source voltage (Q2) | VGSS | +10/-20 | V |
| Drain current (Q2) | ID | -4.0 | A |
| Power Dissipation | PD | 1.77 | W |
| 項目 | 符號 | 條件 | 值 | 單位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 3.0 | V |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=6V | 62.8 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=10V | 36.3 | mΩ |
| Input capacitance (Q1) (Typ.) | Ciss | - | 505 | pF |
| Total gate charge (Q1) (Typ.) | Qg | VGS=10V | 11.8 | nC |
| Gate threshold voltage (Q2) (Max) | Vth | - | -3.0 | V |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 56.8 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-6V | 82.2 | mΩ |
| Input capacitance (Q2) (Typ.) | Ciss | - | 810 | pF |
| Total gate charge (Q2) (Typ.) | Qg | VGS=-10V | 18 | nC |