Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

Features of SiC MOSFETs

Since the dielectric breakdown strength of SiC (silicon carbide) is about 10 times as high as that of Si (silicon), SiC power devices can offer a high withstand voltages and low voltage drops. The on-resistance per unit area can be reduced in SiC devices compared with that of Si for the same withstand voltage.
Bipolar IGBT devices are commonly used as high-voltage transistors of 1000V or higher in Si. IGBT bipolar operation works with two types of carriers, electrons and holes, by injecting minority carriers, holes, into the drift layer, thereby lowering the resistance in the drift layer. However, the disadvantage of bipolar operation is the tail current generated at turn-off due to the accumulation of minority carriers, which increases turn-off loss.
On the other hand, since SiC MOSFETs are a unipolar device that operates only with electrons even in high-voltage products, no tail current is generated, and compared to Si IGBTs, the turn-off loss is reduced. Therefore, SiC MOSFETs are capable of operation in the high frequency range, which is difficult with Si IGBTs, and passive component also contributes to design miniaturization.

Gate Input Charge and On Resistance
Gate Input Charge and On Resistance

Toshiba’s TW070J120B 1200V SiC MOSFET switches faster than a conventional silicon Si IGBT (low-gate input charges, etc.)

Comparison of V<sub>GSS</sub>, V<sub>th</sub> with Other Companies' Products
Comparison of VGSS, Vth with Other Companies' Products

The TW070J120B offers low ON-resistance and a higher Gate Threshold Voltage (Vth) specification [2] to help prevent malfunctions. The wider gate-source voltage (VGSS) specification [1] supports easier design of gate drives.

[1] VGSS : -10 V to 25 V (for TW070J120B)
[2] Vth : 4.2 V to 5.8 V (for TW070J120B)

Product List
Products Device Category Stock Check Portion Usage Description

Stock Checking

Main switch・6

1200 V / 70 mΩ (typ.) @VGS = 20 V / TO-3P(N)


Recommended Articles

Contact Us

Related information

A new window will open