-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
Applications
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
Infrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
IoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
-
Knowledge
- Where To Buy View
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
2nd Generation SiC MOSFETs/IGBT Switching Loss Comparison
Toshiba’s TW070J120B 1200V SiC MOSFETs features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption. It’s target application is 400V AC input AC-DC converter for industrial equipment and bidirectional DC-DC converters (such as those of photovoltaic modules and UPS).
The TW070J120B has reduced the turn-off switching loss by about 80% and the switching time (fall time) by about 70% compared with the 1200V silicon insulated gate bipolar transistor (IGBT) GT40QR21.
Furthermore, the new product also features low ON-voltage characteristics for a current lower than 20A[1].
Incorporating a SiC Schottky barrier diode (SBD) with low forward voltage reduces power loss. A high gate threshold voltage (4.2 to 5.8V) is useful to avoid unintended turn on or off situations.
Notes:
[1] @ambient temperature 25 °C
![Loss comparison of turn-off switching[2]](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/mosfets/articles/sic-mosfets-contribute-to-lower-power-consumption-for-industrial-applications_features_en_1.png)
![Waveform comparison of turn-off switching<sup>[2]</sup>](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/mosfets/articles/sic-mosfets-contribute-to-lower-power-consumption-for-industrial-applications_features_en_2.png)
Notes:
[2] Test condition for GT40QR21: VCC=800 V, IC=10 A, RG=47 Ω, Ta=25 ℃, VGE=20 V/-5 V,
Inductive load: L=300 μH, A diode between source and drain of TW070J120B is used as free wheeling diode (Free Wheeling Diode:FWD) in parallel with the inductive load.
Test condition for TW070J120B: VDD=800 V, ID=10 A, RG=47 Ω, Ta=25 ℃, VGS=20 V/-5 V,
Inductive load: L=300 μH, A diode between source and drain of TW070J120B is used as FWD in parallel with the inductive load.
Related information
Queries about purchasing, sampling and IC reliability
Stock Check & Purchase
require 3 characters or more.
| Part Number | Authorized Distributor | Stock Quantity | Date | Shopping Cart |
|---|