Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

SiC MOSFETs Contribute to lower power consumption for industrial applications

Toshiba’s TW070J120B 1200V SiC MOSFET features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption. It’s target application is 400V AC input AC-DC converter for industrial equipment and bidirectional DC-DC converters (such as those of photovoltaic modules and UPS).
The TW070J120B has reduced the turn-off switching loss by about 80% and the switching time (fall time) by about 70% compared with the 1200V silicon insulated gate bipolar transistor (IGBT) GT40QR21.
Furthermore, the new product also features low ON-voltage characteristics for a current lower than 20A[1].
Incorporating a SiC Schottky barrier diode (SBD) with low forward voltage reduces power loss. A high gate threshold voltage (4.2 to 5.8V) is useful to avoid unintended turn on or off situations.

Notes:
[1] @ambient temperature 25 °C

Loss comparison of turn-off switching<sup>[2]</sup>
Loss comparison of turn-off switching[2]
Waveform comparison of turn-off switching<sup>[2]</sup>
Waveform comparison of turn-off switching[2]

Notes:
[2] Test condition for GT40QR21: VCC=800 V, IC=10 A, RG=47 Ω, Ta=25 ℃, VGE=20 V/-5 V,
Inductive load: L=300 μH, A diode between source and drain of TW070J120B is used as free wheeling diode (Free Wheeling Diode:FWD) in parallel with the inductive load.
Test condition for TW070J120B: VDD=800 V, ID=10 A, RG=47 Ω, Ta=25 ℃, VGS=20 V/-5 V,
Inductive load: L=300 μH, A diode between source and drain of TW070J120B is used as FWD in parallel with the inductive load.

Conduction characteristics comparison
Conduction characteristics comparison

Contacts

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs

Queries about purchasing, sampling and IC reliability

Stock Check & Purchase

keyword:

Disclaimer for External Link
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.

Related information

A new window will open