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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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In forward bias, the p-type side is more positively biased than the n-type side. When a pn junction diode is forward-biased at VF, most of it is applied across the pn junction, causing the diffusion potential to decrease by VF. As a result, electrons, the majority carriers in the n-type semiconductor, diffuse from a region with a higher carrier density. (Similarly, holes, the majority carriers in the p-type semiconductor, diffuse from a region with a higher carrier density.) Electrons are injected into the n-type semiconductors from the bias to compensate for the amount of electrons reduced by diffusion whereas holes are injected into (i.e., electrons are drawn away from) the p-type semiconductor. As a result, current continues flowing.