1-3-1. Forward biasing

Figure 1-13 Forward-biased pn junction
Figure 1-13 Forward-biased pn junction

In forward bias, the p-type side is more positively biased than the n-type side. When a pn junction diode is forward-biased at VF, most of it is applied across the pn junction, causing the diffusion potential to decrease by VF. As a result, electrons, the majority carriers in the n-type semiconductor, diffuse from a region with a higher carrier density. (Similarly, holes, the majority carriers in the p-type semiconductor, diffuse from a region with a higher carrier density.) Electrons are injected into the n-type semiconductors from the bias to compensate for the amount of electrons reduced by diffusion whereas holes are injected into (i.e., electrons are drawn away from) the p-type semiconductor. As a result, current continues flowing.

Chapter1 Basics of Schottky Barrier Diodes (Basic of Semiconductor Device)

1. Conductors, semiconductors, and insulators
1-1. Energy band diagram
1-2. Characteristics of an intrinsic silicon semiconductor
1-3. pn junction
1-3-2. Reverse biasing

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