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Difference Depending on Metal of Schottky Barrier Diodes (SBDs)

Difference Depending on Metal of Schottky Barrier Diodes (SBDs)

In the case of the SBD, the semiconductor consists of n-type layers, and so the metal acts as the anode of the diode. Likewise, only electrons are carriers, and the SBD becomes a unipolar element just like a MOSFET.
The energy level of silicon differs from metal (energy gap). This energy level differs depending on the metal element. ΦB is the symbol for this difference. Pt (platinum) is a metal with a large energy gap. V (vanadium) or Ti (titanium) are metals with small energy gaps. Adopting a metal with a large ΦB makes leakage current small, but makes forward voltage VF big. For metals with small ΦB, the opposite tendency are obtained.

Chapter II : Diodes

Types of Diodes
Functions of Rectifier Diodes
Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)
FRDs (Fast Recovery Diodes)
Voltage Regulator Diodes (Zener Diodes)
TVS diode (ESD protection diode)
Difference between TVS Diodes and Zener Diodes (1)
Difference between TVS Diodes and Zener Diodes (2)
Variable-capacitance Diodes (Varicap Diodes)
Schottky Barrier Diodes (SBDs)
Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)
Characteristics Application of Various Diodes

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