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Chapter II : Diodes : Difference Depending on Metal of Schottky Barrier Diodes (SBDs)

In the case of the SBD, the semiconductor consists of n-type layers, and so the metal acts as the anode of the diode. Likewise, only electrons are carriers, and the SBD becomes a unipolar element just like a MOSFET.
The energy level of silicon differs from metal (energy gap). This energy level differs depending on the metal element. ΦB is the symbol for this difference. Pt (platinum) is a metal with a large energy gap. V (vanadium) or Ti (titanium) are metals with small energy gaps. Adopting a metal with a large ΦB makes leakage current small, but makes forward voltage VF big. For metals with small ΦB, the opposite tendency are obtained.

Difference Depending on Metal of Schottky Barrier Diodes (SBDs)

Chapter II : Diodes

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