-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
Applications
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
Infrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
IoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
-
Knowledge
- Where To Buy View
-
My ToshibaSemicon
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
Does the E-Pad (metal frame) exposed on the surface of a high-side IPD have the same potential as GND?
The HSSOP31 and HDIP30 packages for our high-voltage IPDs have an E-Pad (metal frame) exposed on the package surface. Its voltage potential is equal to GND.
The circuit, operation, and usage of the high-voltage IPD are also described in "TPD4163_TPD4164 application note “, “Square-Wave control type TPD4162F/TPD4166F”. Please also refer to these documents.
Related Links
The following documents also contain related information.
