Lineup Expansion of Automotive 40V N‑channel MOSFETs in Small, High Heat Dissipation S-TOGL™ Package

Lineup Expansion of Automotive 40V N‑channel MOSFETs in Small, High Heat Dissipation S‑TOGL™ Package

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched the "XPJ1R504PB," an automotive 40V N-channel power MOSFET rated at 120A featuring the S-TOGL™ package, expanding its lineup for 12V systems.
By adding this product to its existing lineup of mass-produced 40V products in the S-TOGL™ package, including XPJR6604PB and XPJ1R004PB, Toshiba has expanded the range of product options to meet various applications and performance requirements.

In recent years, with the advancement of electrification in automotive equipment, the adoption of inverters and motor drives has been expanding, driving higher output and efficiency. To address these trends, MOSFETs are required to deliver both low power loss and high heat dissipation. The XPJ1R504PB, featuring the S-TOGL™ package, enables compact, high-density mounting and excellent heat dissipation, thereby helping to reduce the size of automotive equipment and improve efficiency.

As automotive equipment is used in a wide range of temperature environments, the reliability of solder joints in board mounting is highly important. The S-TOGL™ package employs gull‑wing leads that help relieve mounting stress, thereby improving solder joint reliability.

The new product adopts a post-less structure that unifies the chip’s source electrode connection and outer leads, thereby reducing parasitic resistance and achieving low On resistance. This helps reduce conduction loss and suppress heat generation, thereby helping to improve overall system efficiency. The product is also compliant with the AEC-Q101 automotive reliability standard.

Toshiba will continue to promote the development of automotive MOSFET products suited to various applications and system requirements, thereby contributing to higher efficiency in a wide range of automotive applications.

Features

Small S-TOGL™ package with low package resistance, and high heat dissipation

Features Explanation

Small S-TOGL™ package with low package resistance, and high heat dissipation

Figure 1. Comparison of post structure and post-less structure
Figure 1. Comparison of post structure and post-less structure

The S-TOGL™ package features a post-less structure that integrates the chip’s source electrode connection and outer leads, eliminating internal connection posts. This reduces parasitic resistance and achieves low On-resistance (RDS(ON)). In addition, the use of a thick copper frame lowers transient thermal impedance between the channel and the case, helping to reduce the size of equipment and power loss. Furthermore, a multi-pin structure for the source leads improves current distribution, enabling high current capability.

Applications

  • Automotive equipment: inverters, semiconductor relays, load switches, motor drives, etc.

Main Specifications

(Unless otherwise specified, Ta=25°C)

Part number XPJ1R504PB XPJR6604PB[1] XPJ1R004PB[1]
Polarity N-channel
Absolute
maximum
ratings		 Drain-source voltage VDSS (V) 40
Drain current (DC) ID (A) 120 200 160
Drain current (pulsed) IDP (A) 360 600 480
Channel temperature Tch (°C) 175
Electrical
characteristics		 Drain-source On-resistance
RDS(ON) (mΩ)		 VGS=6V Max 2.67 1.16 1.8
VGS=10V Max 1.54 0.66 1.0
Gate threshold voltage
Vth (V)		 VDS=10V 2.0 to 3.0
Input capacitance
Ciss (pF)		 VDS=10V,
VGS=0V,
f=300kHz		 Typ. 4100 8750 5300
Thermal characteristics Channel-to-case thermal impedance
Zth(ch-c) (°C/W)		 Tc=25°C Max 0.76 0.4 0.67
Package S-TOGL™
Series U-MOSⅨ-H
Sample check & availability Buy Online Buy Online Buy Online

Note:
[1] Existing products

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* S-TOGL™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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