Silicon carbide (SiC) is a semiconductor material with a high electric breakdown field, saturated electron velocity, and thermal conductivity, compared to silicon (Si). Therefore, when used in semiconductor devices, they achieve higher voltage resistance, higher-speed switching, and lower ON-resistance compared to Si devices. This is expected to be a next-generation low-loss device that contribute to lower power consumption and system downsizing.
Third generation 1200V SiC MOSFETs from Toshiba boost industrial power-conversion efficiency
Toshiba’s New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss
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