SSM6K211FE

EOL announced

Small Low ON resistance MOSFETs

Description

Application Scope High-Speed Switching / Power Management Switches
Polarity N-ch
Generation U-MOSⅢ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-563 (ES6)
Package Image Toshiba SSM6K211FE Small Low ON resistance MOSFETs product ES6 package image
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions View
Land pattern dimensions View
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 20 V
Gate-Source voltage VGSS +/-10 V
Drain current ID 3.2 A
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 1.0 V
Gate threshold voltage (Min) Vth - 0.35 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 118
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 82
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 59
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 47
Input capacitance (Typ.) Ciss - 510 pF
Total gate charge (Typ.) Qg VGS=4.5V 10.8 nC

Document

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Dec,2013

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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