This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application. Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected. TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Used to calculate channel temperature
Gate leakage current (IGSS)
Cut-off current from gate to source
Drain cut-off current (IDSS)
Cut-off current from drain to source
Drain-source breakdown voltage (V(BR)DSS)
Breakdown voltage between drain and source
Gate and source are shorted so as not to make a channel.
Gate threshold voltage (Vth)
Gate-source voltage that can send designated drain current
Drain source ON resistance (RDS(ON))
It corresponds to collector-emitter saturation voltage (VCE(sat)) of bipolar transistor. Voltage drop is expressed as resistance under designated condition. It has positive thermal coefficient.
Forward transfer admittance (|Yfs|)
The ratio of change of output current to change of gate input voltage. Its unit is “S: siemens”, same as [A]/[V].